"Quasi-Non-Volatile" Memory Looks to Fill Gap Between Volatile and Non-Volatile Memory

2D materials produce a semi-floating gate memory that falls somewhere between DRAM and SRAMImage: School of Microelectronics, Fudan University This schematic shows the design for a new semi-floating gate memory.

Researchers at Fudan University in Shanghai, China have leveraged two-dimensional (2D) materials to fabricate a relatively new gate design for transistors that may fill the gap between volatile and non-volatile memory.

The result is what the researchers are dubbing a...

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